Physical-thermal modelling of GaN Gunn oscillations

This paper describes the analysis of GaN Gunn oscillations by means of a physical-thermal modelling. It is based on the coupling of an energy-balance model for the description of the active area with a thermal model for the description of the lattice temperature everywhere in the device. The most important aspect of the model is that it takes into account the local temperature at each point and the influence on transport properties. Electric and thermal behaviours of GaN n⁺nn⁺ Gunn devices are described as well as the conditions which have to be fulfilled to obtain the Gunn oscillations when the lattice temperature is taken into account, thus making it possible to optimize the device.