Effects of method for formation of first monolayers on strain state of GaAs films on vicinal Si(001) Substrate

Author

Loshkarev, Ivan D. ; Vasilenko, Anton P. ; Putyato, Mikhail A. ; Semyagin, Boris R. ; Preobrazhenskii, Valery V.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2010

fDate

June 30 2010-July 4 2010

Firstpage

84

Lastpage

86

Abstract

The significant dependence of strain state of lattice of GaAs films grown by molecular-beam epytaxy technique (MBE) on the nucleation method of the first layers of GaP buffer (50 nm) on vicinal substrate Si(001) 4° round <;011> was revealed. GaP growth started layer-by-layer with gallium or phosphorus sublayer. In the case of GaP nucleating with gallium, GaAs film has significant lattice rotation round <;011>. When buffer starts forming with phosphorus layer GaAs film is evident to rotate round <;001>. Film relaxation degree exceeds 100%, it is in the lateral strained state. The analysis was carried out using the triclinic distortion model. The reciprocal scattering map obtained using X-ray diffraction in the three-axis small enabling circuit is presented. The map evidently shows that GaAs film lattice is rotated.

Keywords

III-V semiconductors; X-ray diffraction; buffer layers; gallium arsenide; internal stresses; molecular beam epitaxial growth; monolayers; nucleation; semiconductor epitaxial layers; semiconductor growth; GaAs; GaP; Si; X-ray diffraction; buffer layer; film relaxation; lattice rotation; molecular-beam epitaxy; monolayer formation; nucleation; phosphorus layer; strain state; thin films; triclinic distortion model; Annealing; Gallium arsenide; Scattering; Silicon; Substrates; Relaxation; heterosystem; vicinal interfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-6626-9

Type

conf

DOI

10.1109/EDM.2010.5568657

Filename

5568657