Title :
Development of low temperature p-Si TFT-LCD
Author :
Liu, David N. ; Yeh, Yung-Hui ; Chiou, Hwa-Liang
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
In this paper, a 3 inch LTPS TFT-LCD with the highest resolution of 667 pixel-per-inch (ppi) has been successfully developed and demonstrated by PMOS technology. The Al-based metal is used as data line to reduce RC loading and to improve the image quality of displays. In addition, a less surface roughness of p-Si and gate-oxide processes are also used and developed in this experiment.
Keywords :
MOS integrated circuits; aluminium alloys; image resolution; liquid crystal displays; silicon; surface roughness; thin film transistors; 3 inch; Al-based metal; PMOS technology; RC loading; Si; display image quality; display image resolution; gate-oxide processes; low temperature TFT-LCD; p-Si TFT-LCD; surface roughness; thin film transistor-LCD; Annealing; CMOS technology; Crystallization; Displays; Glass; Grain size; Rough surfaces; Surface roughness; Temperature; Thin film transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363171
