DocumentCode
2014957
Title
A fully integrated 2.4/3.4 GHz Dual-band CMOS power amplifier with variable inductor
Author
Yoo, Hyun Jin ; Lee, Kang Hyuk ; Oh, Hyuk Jun ; Eo, Yun Seong
Author_Institution
Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea
fYear
2009
fDate
28-29 Sept. 2009
Firstpage
371
Lastpage
374
Abstract
A 2.4/3.4 GHz dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1 dB and PAE of dual band PA is 22.4 dBm and 28.8% at 2.4 GHz, and 18.8 dBm and 14.4% at 3.4 GHz, respectively. Also the measured output power at which the achieved EVM is -25 dB is 15 dBm at 2.4 GHz and 12.7 dBm at 3.4 GHz. The chip is fabricated using 0.13 um CMOS process and occupies 1.2 mm times 1 mm including pads.
Keywords
CMOS integrated circuits; MMIC power amplifiers; UHF power amplifiers; field effect MMIC; inductors; CMOS process; chip fabrication; driver amplifier stage; frequency 2.4 GHz; frequency 3.4 GHz; fully integrated dual-band CMOS power amplifier; size 0.13 mum; variable inductor; CMOS process; Costs; Driver circuits; Dual band; Inductors; Power amplifiers; Radio frequency; Semiconductor device measurement; Switches; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4749-7
Type
conf
Filename
5296035
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