• DocumentCode
    2014963
  • Title

    Improved Sub-micron Cmos Device Performance Due To Fluorine In Cvd Tungsten Silicide

  • Author

    Jain, V. ; Pramanik, D. ; Chang, K.Y. ; Chenming Hu

  • Author_Institution
    VLSI Technology Inc., CA
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    91
  • Lastpage
    92
  • Keywords
    CMOS technology; Capacitance measurement; Doping profiles; Electric variables measurement; Electrons; Leakage current; Silicides; Thickness measurement; Tungsten; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.706005
  • Filename
    706005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2014963