Title :
Improved Sub-micron Cmos Device Performance Due To Fluorine In Cvd Tungsten Silicide
Author :
Jain, V. ; Pramanik, D. ; Chang, K.Y. ; Chenming Hu
Author_Institution :
VLSI Technology Inc., CA
Keywords :
CMOS technology; Capacitance measurement; Doping profiles; Electric variables measurement; Electrons; Leakage current; Silicides; Thickness measurement; Tungsten; Tunneling;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706005
