DocumentCode
2015
Title
Defect Engineering Using Bilayer Structure in Filament-Type RRAM
Author
Daeseok Lee ; Jiyong Woo ; Euijun Cha ; Sangsu Park ; Sangheon Lee ; Jaesung Park ; Hyunsang Hwang
Author_Institution
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Volume
34
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
1250
Lastpage
1252
Abstract
To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.
Keywords
absorption; circuit stability; low-power electronics; random-access storage; bilayer structure; circuit stability; defect engineering; filament-type RRAM; improved ON-OFF ratio; interfacial state; low-power RAM; oxygen absorption layer; stable resistive RAM; switching layer; Absorption; Hafnium compounds; Random access memory; Reliability; Resistance; Switches; Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2279009
Filename
6594832
Link To Document