Title :
Robust X-band LNAs in AlGaN/GaN technology
Author :
Janssen, P.B. ; van Heijningen, M. ; Visser, G.C. ; Rodenburg, M. ; Johnson, H.K. ; Uren, M.J. ; Morvan, E. ; van Vliet, F.E.
Author_Institution :
TNO Defence, Security & Safety, The Hague, Netherlands
Abstract :
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology and in the QinetiQ AlGaN/GaN coplanar waveguide technology. Both LNAs operate at X-band. An input power handling of >41 dBm for the first iteration design of the Alcatel-Thales III-V lab version has been published. The designs and measurement results of the two realised low noise amplifiers are presented in this paper. The results show that gallium nitride is a suitable technology for robust receiver design.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguides; gallium compounds; low noise amplifiers; microstrip circuits; microwave receivers; wide band gap semiconductors; AlGaN-GaN; Alcatel-Thales III-V lab; MMIC technology; QinetiQ coplanar waveguide technology; gallium-nitride technology; low noise amplifier; microstrip technology; receiver design; robust X-band LNA; wide bandgap semiconductor technology; Aluminum gallium nitride; Coplanar waveguides; Dielectric thin films; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Low-noise amplifiers; Noise robustness; Semiconductor device noise; Switches;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
