• DocumentCode
    2015097
  • Title

    Silicon technology directions in the new millennium

  • Author

    Ning, Tak H.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Silicon technology development is at a crossroad, in spite of its exponential rate of progress for more than thirty years. It is now clear that traditional CMOS devices are fast approaching both performance saturation and density saturation. Nonetheless, CMOS will remain the digital logic technology platform for future evolution of silicon technology in application-specific directions. Besides optimizing CMOS scaling further for speed and density, there will be additional emphases placed upon low power dissipation, on programmability, RF and analog functions, and on the chip-scale integration of these functions with digital CMOS. The technical challenges are formidable, but the application opportunities enabled by these developments will provide the incentive for driving the development of silicon technology forward
  • Keywords
    CMOS integrated circuits; integrated circuit technology; technological forecasting; CMOS devices; Si; future developments; silicon technology; CMOS logic circuits; CMOS technology; Logic devices; Power dissipation; Radio frequency; Research and development; Silicon; Spine; Technological innovation; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843883
  • Filename
    843883