DocumentCode
2015097
Title
Silicon technology directions in the new millennium
Author
Ning, Tak H.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2000
fDate
2000
Firstpage
1
Lastpage
6
Abstract
Silicon technology development is at a crossroad, in spite of its exponential rate of progress for more than thirty years. It is now clear that traditional CMOS devices are fast approaching both performance saturation and density saturation. Nonetheless, CMOS will remain the digital logic technology platform for future evolution of silicon technology in application-specific directions. Besides optimizing CMOS scaling further for speed and density, there will be additional emphases placed upon low power dissipation, on programmability, RF and analog functions, and on the chip-scale integration of these functions with digital CMOS. The technical challenges are formidable, but the application opportunities enabled by these developments will provide the incentive for driving the development of silicon technology forward
Keywords
CMOS integrated circuits; integrated circuit technology; technological forecasting; CMOS devices; Si; future developments; silicon technology; CMOS logic circuits; CMOS technology; Logic devices; Power dissipation; Radio frequency; Research and development; Silicon; Spine; Technological innovation; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843883
Filename
843883
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