• DocumentCode
    2015173
  • Title

    Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?

  • Author

    Alam, Muhammad A. ; Bude, Jeff ; Ghetti, Andrea

  • Author_Institution
    Lucent Technol. Bell Labs., Murray Hill, NJ, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    21
  • Lastpage
    26
  • Abstract
    A simple model, based on the concept of Anode Hole Injection, explains a number of puzzling measurements of oxide lifetime as a function of applied voltage. We provide systematic explanations of these measurements, and explore its implications for gate oxide reliability
  • Keywords
    charge injection; electric breakdown; 1/E model; E model; anode hole injection model; field acceleration; gate oxide reliability; oxide breakdown; oxide lifetime; Acceleration; Anodes; Breakdown voltage; Charge carrier processes; Dielectric measurements; Electric breakdown; Electron traps; Extrapolation; Impact ionization; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843886
  • Filename
    843886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2015173