DocumentCode :
2015173
Title :
Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?
Author :
Alam, Muhammad A. ; Bude, Jeff ; Ghetti, Andrea
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fYear :
2000
fDate :
2000
Firstpage :
21
Lastpage :
26
Abstract :
A simple model, based on the concept of Anode Hole Injection, explains a number of puzzling measurements of oxide lifetime as a function of applied voltage. We provide systematic explanations of these measurements, and explore its implications for gate oxide reliability
Keywords :
charge injection; electric breakdown; 1/E model; E model; anode hole injection model; field acceleration; gate oxide reliability; oxide breakdown; oxide lifetime; Acceleration; Anodes; Breakdown voltage; Charge carrier processes; Dielectric measurements; Electric breakdown; Electron traps; Extrapolation; Impact ionization; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
Type :
conf
DOI :
10.1109/RELPHY.2000.843886
Filename :
843886
Link To Document :
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