Title :
Anode hole injection versus hydrogen release: the mechanism for gate oxide breakdown
Author :
Wu, J. ; Rosenbaum, E. ; MacDonald, B. ; Li, E. ; Tao, J. ; Tracy, B. ; Fang, P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate
Keywords :
MOSFET; annealing; charge injection; hydrogen; semiconductor device breakdown; semiconductor device reliability; D2; H2; MOS transistor; anode hole injection; deuterium annealing; device lifetime; gate oxide breakdown; hydrogen annealing; interfacial hydrogen release; reliability; Annealing; Anodes; Charge carrier processes; Degradation; Deuterium; Electric breakdown; Electron traps; Hot carriers; Hydrogen; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843887
