• DocumentCode
    2015203
  • Title

    Anode hole injection versus hydrogen release: the mechanism for gate oxide breakdown

  • Author

    Wu, J. ; Rosenbaum, E. ; MacDonald, B. ; Li, E. ; Tao, J. ; Tracy, B. ; Fang, P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    27
  • Lastpage
    32
  • Abstract
    Recent studies have shown that post-metallization anneal in deuterium can improve transistor lifetime by one order of magnitude or more. In this paper, we show that the gate oxide reliability of devices annealed in deuterium is similar to that of devices annealed in hydrogen. This finding suggests that a model for gate oxide breakdown which involves release of interfacial hydrogen may not be accurate
  • Keywords
    MOSFET; annealing; charge injection; hydrogen; semiconductor device breakdown; semiconductor device reliability; D2; H2; MOS transistor; anode hole injection; deuterium annealing; device lifetime; gate oxide breakdown; hydrogen annealing; interfacial hydrogen release; reliability; Annealing; Anodes; Charge carrier processes; Degradation; Deuterium; Electric breakdown; Electron traps; Hot carriers; Hydrogen; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843887
  • Filename
    843887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2015203