DocumentCode :
2015233
Title :
Quantum dot semiconductor lasers
Author :
Reithmaier, J.P. ; Deubert, S. ; Somers, Andre ; Kaiser, William ; Forchel, A. ; Calligaro, M. ; Michel, N. ; Bansropun, S. ; Krakowski, M. ; Sumpf, Bernd ; Erbert, Gotz ; Fricke, J. ; Trankle, Gunther ; Hadass, D. ; Bilenca, Alberto ; Dery, H. ; Eisenste
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Volume :
1
fYear :
2004
fDate :
7-11 Nov. 2004
Firstpage :
204
Abstract :
Quantum dot lasers for 980 nm high brightness high power applications and for long wavelength telecom applications based on InP were developed. Recent results will be presented and partially discussed in comparison to QW lasers.
Keywords :
III-V semiconductors; indium compounds; optical communication equipment; quantum dot lasers; 980 nm; InP; InP-based lasers; high brightness applications; high power applications; long wavelength telecom applications; quantum dot lasers; semiconductor lasers; Brightness; Optical materials; Power generation; Power lasers; Quantum dot lasers; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Temperature dependence; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
Type :
conf
DOI :
10.1109/LEOS.2004.1363182
Filename :
1363182
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2015233
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