DocumentCode
2015250
Title
MOCVD growth of InAs/GaAs quantum dots and laser diodes
Author
Stewart, K. ; Tan, H.H. ; Wong-Leong, J. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
206
Abstract
This paper discusses the growth of InAs/GaAs quantum dots using MOCVD. Laser diode fabrication using stacked quantum dot structures is also presented.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; semiconductor growth; semiconductor quantum dots; InAs-GaAs; InAs/GaAs quantum dots; MOCVD growth; laser diode fabrication; laser diodes; photoluminescence spectra; stacked quantum dot structures; Atomic force microscopy; Buffer layers; Diode lasers; Gallium arsenide; MOCVD; Optical materials; Quantum dot lasers; Quantum dots; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363183
Filename
1363183
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