S-band discrete and MMIC GaN power amplifiers

Author

Nilsson, Joakim ; Billström, Niklas ; Rorsman, Niklas ; Romanini, Paolo

Author_Institution

Saab Microwave Syst., Saab AB, Gothenburg, Sweden

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

495

Lastpage

498

Abstract

The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 mum GaN HEMT process supplied and processed by Chalmers.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; wide band gap semiconductors; GaN; GaN HEMT process; MMIC GaN power amplifiers; S-band discrete power amplifiers; S-band high power amplifier; frequency 2.7 GHz to 3.3 GHz; microwave power amplifiers; power 10 W; power 100 W; power bars; size 0.25 mum; size 19.2 mm; Bars; Electromagnetic heating; Fixtures; Gallium nitride; High power amplifiers; MMICs; Microwave theory and techniques; Packaging; Phased arrays; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296045