DocumentCode :
2015318
Title :
Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer
Author :
Walker, C.L. ; Sandall, I.C. ; Smowton, P.M. ; Sellers, I.R. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., UK
Volume :
1
fYear :
2004
fDate :
7-11 Nov. 2004
Firstpage :
212
Abstract :
We demonstrate improved gain and loss performance of 1.3 μm In(Ga)As quantum dot laser material using high growth temperature spacer layers to reduce, the internal loss and inhomogeneous broadening, and improve the efficiency.
Keywords :
optical losses; quantum dot lasers; spectral line broadening; 1.3 mum; GaAs spacer layer; InGaAs; high growth temperature spacer layer; improved gain performance; inhomogeneous broadening; internal loss reduction; loss performance; quantum dot lasers; Fiber lasers; Gallium arsenide; Laser theory; Optical materials; Performance gain; Performance loss; Quantum dot lasers; Stationary state; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
Type :
conf
DOI :
10.1109/LEOS.2004.1363186
Filename :
1363186
Link To Document :
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