Thermoelectric power factor in intermetallic semiconductors with MgAgAs type of structure: requirements for highest values and thermal stability achievement

A condition of the maximum thermoelectric power factor (Z*) arising in the intermetallic semiconductors with the crystal structure of the MgAgAs type is unambiguously a heavy doping these materials with both the acceptor and/or donor impurities up to the concentrations, when the Fermi level becomes fixed by the mobility edge of one of the bands with the continuous energies (i.e. conduction or valence band)