Title :
Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs
Author :
Lee, Y.-H. ; Wu, K. ; Linton, T. ; Mielke, N. ; Hu, S. ; Wallace, B.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Channel width dependent pMOSFET hot-carrier degradation has been observed for a 0.25 μm CMOS technology. A detailed characterization revealed two distinct trapping mechanisms that are unique to both narrow and wide width devices. Device simulations indicate that the electric field difference between the STI edge and channel area is responsible for the channel-width dependent degradation. In addition to data from discrete devices, product burn-in data will also be presented to support the channel-width dependent pMOST degradation mechanism
Keywords :
CMOS integrated circuits; MOSFET; electron traps; hot carriers; CMOS technology; channel-width dependence; hot-carrier degradation; product burn-in data; thin-gate pMOSFETs; trapping mechanisms; CMOS technology; Charge carrier processes; Current measurement; Degradation; Educational institutions; Electron traps; Hot carriers; MOSFETs; Stress; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843894
