GaAsSb resonant-cavity-enhanced avalanche photodiode operating at 1.06 μm

Author

Sidhu, R. ; Chen, H. ; Duan, N. ; Karve, G.V. ; Campbell, J.C. ; Holmes, A.L.

Author_Institution

Microelectron. Res. Centre, Texas Univ., Austin, TX, USA

Volume

1

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

220

Abstract

This study demonstrates a GaAs_0.8Sb_0.2-GaAs RCE SACM APD, with a peak quantum efficiency of 93% at 1.06 μm. The device structure is grown on a (100) semi-insulating GaAs substrate using MBE. Devices are fabricated by defining 160 μm mesas using wet chemical etching. Device I-V characteristics are measured at room temperature under white light illumination.

Keywords

III-V semiconductors; avalanche photodiodes; cavity resonators; etching; gallium arsenide; molecular beam epitaxial growth; optical resonators; photodetectors; semiconductor growth; 1.06 mum; 20 degC; GaAs; GaAsSb; GaAsSb photodiode; MBE; RCE SACM APD; avalanche photodiode; device I-V characteristics; device structure; photodetectors; resonant-cavity-enhanced photodiode; room temperature; semiinsulating GaAs substrate; wet chemical etching; white light illumination; Absorption; Avalanche photodiodes; Distributed Bragg reflectors; Gallium arsenide; Microelectronics; Mirrors; Reflectivity; Resonance; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363190

Filename

1363190