DocumentCode :
2015460
Title :
GaAsSb resonant-cavity-enhanced avalanche photodiode operating at 1.06 μm
Author :
Sidhu, R. ; Chen, H. ; Duan, N. ; Karve, G.V. ; Campbell, J.C. ; Holmes, A.L.
Author_Institution :
Microelectron. Res. Centre, Texas Univ., Austin, TX, USA
Volume :
1
fYear :
2004
fDate :
7-11 Nov. 2004
Firstpage :
220
Abstract :
This study demonstrates a GaAs0.8Sb0.2-GaAs RCE SACM APD, with a peak quantum efficiency of 93% at 1.06 μm. The device structure is grown on a (100) semi-insulating GaAs substrate using MBE. Devices are fabricated by defining 160 μm mesas using wet chemical etching. Device I-V characteristics are measured at room temperature under white light illumination.
Keywords :
III-V semiconductors; avalanche photodiodes; cavity resonators; etching; gallium arsenide; molecular beam epitaxial growth; optical resonators; photodetectors; semiconductor growth; 1.06 mum; 20 degC; GaAs; GaAsSb; GaAsSb photodiode; MBE; RCE SACM APD; avalanche photodiode; device I-V characteristics; device structure; photodetectors; resonant-cavity-enhanced photodiode; room temperature; semiinsulating GaAs substrate; wet chemical etching; white light illumination; Absorption; Avalanche photodiodes; Distributed Bragg reflectors; Gallium arsenide; Microelectronics; Mirrors; Reflectivity; Resonance; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
Type :
conf
DOI :
10.1109/LEOS.2004.1363190
Filename :
1363190
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2015460
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