Title :
Analysis of hot-carrier-induced degradation in MOSFETs by gate-to-drain and gate-to-substrate capacitance measurements
Author :
Hsu, CT ; Lau, M.M. ; Yeow, YT ; Yao, ZQ
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Queensland Univ., Brisbane, Qld., Australia
Abstract :
In this paper we describe and demonstrate the use of gate-to-drain capacitance (Cgd) measurements at cryogenic temperature as a tool to characterize hot-carrier-induced charge centers. Also a new method based on gate-to-substrate capacitance (Cgb), validated by means of two-dimensional numerical simulation, is proposed to extract the spatial distribution of oxide interface charges with reasonable accuracy
Keywords :
MOSFET; capacitance; electron traps; hot carriers; 2D numerical simulation; MOSFET; Si-SiO2; cryogenic temperature; gate-to-drain capacitance; gate-to-substrate capacitance; hot-carrier-induced degradation; oxide interface charges; Capacitance measurement; Charge measurement; Cryogenics; Current measurement; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Stress measurement; Temperature measurement;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843897
