Title :
Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors
Author :
Seo, Sang-Woo ; Cha, Cheolung ; Cho, Sang-Yeon ; Huang, Sa ; Jokerst, Nan M. ; Brooke, Martin A. ; Brown, April S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
Abstract :
A significant enhancement of the impulse response and capacitance performance of thin film I-MSMs has been demonstrated through etching, while still preserving the thickness of the absorbing region. Thus, the traditional tradeoff between device output current, as defined by device diameter and absorbing layer thickness and capacitance/speed, has been alleviated through etching enhancement.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; thin film devices; InGaAs; InGaAs photodetectors; absorbing layer thickness; capacitance performance; etch enhanced thin film; etching; impulse response; large area thin film; low capacitance thin film; metal-semiconductor-metal photodetectors; Bonding; Capacitance measurement; Detectors; Etching; Fingers; Indium gallium arsenide; Photodetectors; Plasma measurements; Substrates; Transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363191
