Title :
The radiation-hardened voltage references on bipolar and JFET transistors
Author :
Starchenko, E.I. ; Prokopenko, N.N. ; Budyakov, P.S.
Author_Institution :
Don State Tech. Univ., Rostov-on-Don, Russia
Abstract :
This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013 ÷ 1014 n/cm2 acceptable for many applications.
Keywords :
bipolar transistors; junction gate field effect transistors; radiation hardening (electronics); reference circuits; semiconductor device models; BiFET; bipolar transistors; microelectronic products; npn-type transistors; pJFET transistors; radiation hardness; radiation-hardened voltage references; temperature-stable voltage references; Integrated circuit modeling; JFETs; Neutrons; Resistors; Temperature dependence; Temperature distribution; JFET; radiation hardness; temperature drift; voltage reference;
Conference_Titel :
GCC Conference and Exhibition (GCCCE), 2015 IEEE 8th
Conference_Location :
Muscat
DOI :
10.1109/IEEEGCC.2015.7060065
