DocumentCode
2015539
Title
Reliability characterization of thermal micro-structures implemented on 0.8 μm CMOS chips
Author
Sheng, L.Y. ; De Tandt, C. ; Ranson, W. ; Vounckx, R.
Author_Institution
IMEC Electron. Div., Brussels Univ., Belgium
fYear
2000
fDate
2000
Firstpage
112
Lastpage
117
Abstract
This paper discusses the reliability characterization of thermal microstructures implemented on industrial 0.8 μm CMOS chips. Various degradation and failure mechanisms are identified and evaluated under high temperature operation. The results can be used to optimize the design of thermally based microsensors on CMOS chips
Keywords
CMOS integrated circuits; integrated circuit reliability; microsensors; 0.8 mum; CMOS chips; failure mechanisms; high temperature operation; microsensors; reliability; thermal microstructures; CMOS technology; Calibration; Degradation; Electrical resistance measurement; Passivation; Resistance heating; Resistors; Temperature measurement; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843900
Filename
843900
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