• DocumentCode
    2015561
  • Title

    Reliability studies of bent-beam electro-thermal actuators

  • Author

    Que, Long ; Park, Jae-Sung ; Li, Mo-Huang ; Gianchandani, Yogesh B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    118
  • Lastpage
    122
  • Abstract
    This paper reports on the first lifetime studies of the recently developed bent-beam electro-thermal microactuators. Measurements of p ++ Si bulk micromachined devices under varying operating conditions reveal that device lifetimes and degradation patterns are linked to actuation conditions as well as certain dimensional parameters. Device lifetimes in excess of 30 million cycles are observed. A model similar to that used for fatigue of steel is shown to be very suitable for predicting performance degradation. The model parameters are explored as a function of operating conditions
  • Keywords
    elemental semiconductors; microactuators; semiconductor device reliability; silicon; Si; bent-beam electro-thermal actuators; lifetime studies; microactuators; p++ Si bulk micromachined devices; performance degradation; reliability; Degradation; Electrostatic actuators; Electrothermal effects; Force measurement; Glass; Microactuators; Reliability engineering; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843901
  • Filename
    843901