Title :
Monolithic integration of GaAs devices with completely fabricated Si CMOS
Author :
Ma, Kai ; Chen, Ray ; Miller, David A B ; Harris, James S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
The paper reports on monolithic integration of poly-GaAs switches with a completely fabricated CMOS amplifier. A functional optical receiver is obtained without modifying the Si circuit performance. This approach is simple, with minimum fabrication disturbance limited entirely to the Si processing and greater applicability into much broader areas.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical receivers; silicon; CMOS amplifier; GaAs; Si; monolithic integration; optical receiver; polyGaAs switches; Bandwidth; Gallium arsenide; Glass; Monolithic integrated circuits; Optical receivers; Optical switches; Photoconducting materials; Photonics; Transfer functions; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363195
