Hydrogen bonding of low-k materials deposited by ICPCVD

Summary form only given, as follows. To achieve high-speed integrated circuits, it is required an insulating material with low-k (low dielectric constant). There have been researched various low-k materials such as a-C F, SiOF and methylsilsesquioxane (MSQ). Recently, porous materials such as organosilicate films are studied as low-k materials which films have the organic-morganic hybrid type properties.