Title :
Monolithic integration of AlGaN/GaN-LiNbO3 optical-electronic-structures
Author :
Madison, Shannon M. ; Henderson, Walter ; Namkoong, Gon ; Patel, Ketan M. ; Doolittle, W. Alan ; Ralph, Stephen E.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present an innovative technology directed at monolithic integration of GaN electronic devices with lithium niobate (LiNbO3) waveguides. GaN FETs have been fabricated for use in systems occupying complete phase and amplitude control and measurement capabilities.
Keywords :
aluminium compounds; field effect transistors; gallium compounds; integrated optoelectronics; lithium compounds; optical waveguides; wide band gap semiconductors; AIGaN/GaN-LiNbO3 optical-electronic-structures; AlGaN-GaN; GaN FET; LiNbO3; lithium niobate waveguides; monolithic integration; Aluminum gallium nitride; Electrodes; FETs; Gallium nitride; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Photonic band gap; Topology; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363196
