DocumentCode
2015635
Title
Electron paramagnet resonance of electron states in two-dimensional quantum dot arrays
Author
Lyubin, Alexander S. ; Zinovieva, Aigul F. ; Dvurechinskii, Anatoly V.
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2010
fDate
June 30 2010-July 4 2010
Firstpage
6
Lastpage
8
Abstract
Electron paramagnetic resonance and spin echo methods are used to probe the spin dynamics in two-dimensional quantum dot (QD) arrays with different shape of nanoclusters. Two types of QD structures were investigated: 1) with single shaped QDs (hut-clusters having the ratio of height h to lateral size l, h/l = 0.1), and 2) with two groups of QDs, hut- and dome-clusters (h/l = 0.2). Both types of structures demonstrate the EPR signals from electrons localized in QD layers. The orientation dependence of EPR line width for first type structures is well described by the model of spin relaxation through precession in the effective magnetic field, arising during tunneling between QDs due to structure-inversion-asymmetry. In the experiments on structures with dome-clusters the additional peculiarity, which cannot be explained within the framework of precession model, is observed. The different orientation dependencies can be explained by different localization degree of electrons in the investigated structures. Spin echo measurements provide the longest spin decoherence time for structures with single shaped QDs.
Keywords
Ge-Si alloys; paramagnetic resonance; semiconductor quantum dots; spin dynamics; spin echo (EPR); tunnelling; EPR signals; Si-Ge; electron paramagnetic resonance; spin dynamics; spin echo methods; spin relaxation; structure-inversion-asymmetry; tunneling; two-dimensional quantum dot arrays; Helium; Laboratories; Nanophotonics; Physics; Quantum dots; Seminars; EPR; Quantum dots; spin echo;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-6626-9
Type
conf
DOI
10.1109/EDM.2010.5568689
Filename
5568689
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