Title :
Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices
Author :
Baumann, Robert C. ; Smith, Eric B.
Author_Institution :
Silicon Technol. Dev. Group, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The impact of cosmic neutron induced 10B fission in production logic devices is reported for the first time. Using a special 20 K cold neutron beam to accelerate SER events, we unambiguously demonstrate that neutron induced 10B fission is a significant source of soft errors in deep-submicron SRAMs fabricated with borophosphosilicate glass (BPSG)
Keywords :
SRAM chips; borosilicate glasses; fission; integrated circuit reliability; integrated logic circuits; life testing; neutron effects; phosphosilicate glasses; radiation hardening (electronics); 20 K; B2O3-P2O5-SiO2 ; BPSG; SER events; borophosphosilicate glass; cold neutron beam; cosmic neutron induced 10B fission; deep submicron SRAM devices; deep-submicron SRAMs; neutron-induced boron fission; production logic devices; soft errors; Alpha particles; Boron; Flip chip; Impurities; Inorganic materials; Ionizing radiation; Logic devices; Neutrons; Packaging; Random access memory;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843906