• DocumentCode
    2015733
  • Title

    Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices

  • Author

    Baumann, Robert C. ; Smith, Eric B.

  • Author_Institution
    Silicon Technol. Dev. Group, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    152
  • Lastpage
    157
  • Abstract
    The impact of cosmic neutron induced 10B fission in production logic devices is reported for the first time. Using a special 20 K cold neutron beam to accelerate SER events, we unambiguously demonstrate that neutron induced 10B fission is a significant source of soft errors in deep-submicron SRAMs fabricated with borophosphosilicate glass (BPSG)
  • Keywords
    SRAM chips; borosilicate glasses; fission; integrated circuit reliability; integrated logic circuits; life testing; neutron effects; phosphosilicate glasses; radiation hardening (electronics); 20 K; B2O3-P2O5-SiO2 ; BPSG; SER events; borophosphosilicate glass; cold neutron beam; cosmic neutron induced 10B fission; deep submicron SRAM devices; deep-submicron SRAMs; neutron-induced boron fission; production logic devices; soft errors; Alpha particles; Boron; Flip chip; Impurities; Inorganic materials; Ionizing radiation; Logic devices; Neutrons; Packaging; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843906
  • Filename
    843906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2015733