Title :
One time programmable drift antifuse cell reliability
Author :
Candelier, Philippe ; Villani, Nathalie ; Schoellkopf, Jean-Pierre ; Mortini, Patrick
Author_Institution :
STI Microelectron., Crolles, France
Abstract :
An innovative non-volatile memory cell based on gate oxide breakdown is presented. The full compatibility with a standard CMOS process and the limited programming current per cell make the drift antifuse a low cost and dense non-volatile storage solution. Reliable storage is demonstrated and results from both device architecture and design optimization are given
Keywords :
CMOS memory circuits; integrated circuit design; integrated circuit reliability; integrated memory circuits; programmable circuits; semiconductor device breakdown; dense nonvolatile storage; design optimization; device architecture; drift antifuse; gate oxide breakdown; limited programming current; low cost; nonvolatile memory cell; one time programmable drift antifuse cell reliability; standard CMOS process; CMOS process; Capacitors; Costs; Electric breakdown; Fuses; Low voltage; MOS devices; Nonvolatile memory; Random access memory; Switches;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843909
