Title :
Hot carrier reliability of lateral DMOS transistors
Author :
O´Donovan, V. ; Whiston, Shay ; Deignan, Anne ; Chleirigh, Cait Ni
Author_Institution :
Analog Devices, Limerick, Ireland
Abstract :
The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS
Keywords :
MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; 20 V; CMOS test methods; LDNMOS; LDPMOS; degradation; hot carrier reliability; hot-carrier phenomenon; hot-electron safe-operation-area; hot-electrons; lateral DMOS transistors; reliable device operation; simulation; Degradation; Electrons; Hot carriers; MOSFETs; Performance analysis; Performance evaluation; Predictive models; Stress; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843910
