DocumentCode
2015795
Title
Hot carrier reliability of lateral DMOS transistors
Author
O´Donovan, V. ; Whiston, Shay ; Deignan, Anne ; Chleirigh, Cait Ni
Author_Institution
Analog Devices, Limerick, Ireland
fYear
2000
fDate
2000
Firstpage
174
Lastpage
179
Abstract
The focus of this paper is on the degradation induced by hot-electrons in lateral DMOS transistors. The physical justification for the abandonment of the existing CMOS test methods is explained. Simulation results supporting the hot-carrier phenomenon occurring are reported and both parametrically and experimentally determined hot-electron safe-operation-areas (HE-SOA) are examined for reliable device operation of 20 V LDNMOS and 20 V LDPMOS
Keywords
MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; 20 V; CMOS test methods; LDNMOS; LDPMOS; degradation; hot carrier reliability; hot-carrier phenomenon; hot-electron safe-operation-area; hot-electrons; lateral DMOS transistors; reliable device operation; simulation; Degradation; Electrons; Hot carriers; MOSFETs; Performance analysis; Performance evaluation; Predictive models; Stress; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843910
Filename
843910
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