High performance deep-submicron n-MOSFETs by nitrogen implantation and in-situ HF vapor clean

Author

Chen, Jiann Heng ; Lei, Tan Fu ; Chen, Chia Lin ; Chao, Tien Sheng ; Wen, Wen Ying ; Chen, Kuag Ting

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

180

Lastpage

185

Abstract

This study demonstrates high performance and reliable deep-submicron n-MOSFETs with ultra-thin gate oxide prepared by combining with nitrogen gate electrode implantation and native-oxide-free in-situ HF vapor pre-oxidation cleaning. Our results indicate that the performance and reliability, including the leakage current of the ultra-thin gate oxide, the drain current (I_d), transconductance (G_m), charge pumping current (I_cp), stress induced leakage current (SILC), and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides are all significantly improved

Keywords

MOSFET; hot carriers; ion implantation; leakage currents; nitrogen; semiconductor device measurement; semiconductor device reliability; semiconductor doping; surface cleaning; 4 nm; Si:N; charge pumping current; drain current; high performance; high performance deep-submicron n-MOSFETs; hot carrier reliability; in-situ HF vapor clean; leakage current; n-MOSFETs; native-oxide-free in-situ HF vapor pre-oxidation cleaning; nitrogen gate electrode implantation; nitrogen implantation; reliability; reliable deep-submicron n-MOSFETs; stress induce leakage current; thin gate oxides; transconductance; ultra-thin gate oxide; Charge pumps; Cleaning; Electrodes; Hafnium; Hot carriers; Leakage current; MOSFET circuits; Nitrogen; Stress; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-5860-0

Type

conf

DOI

10.1109/RELPHY.2000.843911

Filename

843911