Title :
Role of hydrogen anneal in thin gate oxide for multi-metal-layer CMOS process
Author :
Lee, Y.-H. ; Nachman, R. ; Seshan, K. ; Kau, D.-C. ; Mielke, N.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
This work investigated the impact of H2 gas in the final annealing cycle of a 5-metal-layer CMOS process and its effect on MOS device behavior in the presence of Al/Ti metallization. The role of H2 was evaluated with transistor electrical testing and with gate-oxide stressing, namely, bias-temperature and hot-carrier injection. Both electrical testing and stressing data showed no difference in device behavior when different external H2% was used. However, some differences in PMOSFET bias-temp were observed when the annealing cycle was totally eliminated. Moreover, some differences were observed for devices with different metal coverage. This paper details the results and proposes a model to explain the observations
Keywords :
CMOS integrated circuits; MOSFET; aluminium; annealing; hot carriers; integrated circuit metallisation; integrated circuit testing; semiconductor device testing; titanium; 5-metal-layer CMOS process; Al-Ti; Al/Ti metallization; H2; H2 gas; MOS device behavior; PMOSFET bias-temperature; annealing cycle; bias-temperature; electrical testing; gate-oxide stressing; hot-carrier injection; hydrogen annealing; metal coverage; multi-metal-layer CMOS process; thin gate oxide; transistor electrical testing; Annealing; CMOS process; Hydrogen; MOS devices; Passivation; Semiconductor films; Semiconductor materials; Testing; Tin; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843912
