Device inherent IMD reproducibility issues in GaN HEMTs

Author

Srinidhi, Embar R. ; Ma, Rui ; Kompa, Günter ; Bangert, Axel

Author_Institution

Dept. of Microwave Electron. Lab. (MICEL), Univ. of Kassel, Kassel, Germany

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

108

Lastpage

111

Abstract

This paper stresses on critical requirements for characterizing device inherent intermodulation distortion (IMD) products in power HEMTs for 3G wideband applications. An accurate broadband RF testbench is essential for reliable nonlinearity measurements. With the optimized IMD characterization testbench, the reproducibility of sweet-spot behavior in GaAs and GaN HEMT technologies has been investigated. This involved statistical process consistency evaluation of GaAs and GaN HEMT semiconductor technologies in terms of their respective pinch-off voltages characterizing sufficient device samples. Corresponding influence on the nature of sweet-spot repeatability under two-tone and multi-carrier WCDMA stimuli revealed the importance of IF load termination.

Keywords

3G mobile communication; III-V semiconductors; UHF field effect transistors; code division multiple access; gallium arsenide; gallium compounds; intermodulation distortion; power HEMT; wide band gap semiconductors; 3G wideband applications; GaAs; GaN; IF load termination; IMD reproducibility; intermodulation distortion; multicarrier WCDMA stimuli; nonlinearity measurement; pinch-off voltage; power HEMT; statistical process consistency evaluation; sweet-spot repeatability; Gallium arsenide; Gallium nitride; HEMTs; Intermodulation distortion; MODFETs; Radio frequency; Reproducibility of results; Stress; Testing; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296069