Title :
Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride
Author :
Okandan, M. ; Fonash, S.J. ; Maiti, B. ; Tseng, H.-H. ; Tobin, P.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Evolution to quasi-breakdown with constant current stressing, annealing behavior and response to further post-quasi-breakdown stressing are observed in 30 Å (measured by ellipsometry) furnace grown oxide and oxynitride samples. The innate behavior of the dielectrics is clearly demonstrated in the wear-out/failure stage with these measurements and anneals. Devices tested are NMOS transistors with channel width of 15 μm and lengths ranging from 15 to 0.225 μm
Keywords :
MOSFET; annealing; dielectric thin films; failure analysis; leakage currents; nitridation; oxidation; semiconductor device breakdown; semiconductor device reliability; 0.225 to 15 mum; 30 angstrom; NMOS transistors; Si-SiO2; Si-SiON; annealing behavior; channel length; channel width; constant current stressing; dielectrics; ellipsometry; failure stage; furnace grown oxide; gate leakage currents; post-quasi-breakdown stressing; quasi-breakdown; ultra-thin oxide; ultra-thin oxynitride; Annealing; Argon; Breakdown voltage; Charge pumps; Degradation; Dielectric measurements; Electric breakdown; Leakage current; Stress measurement; Testing;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843913
