High-frequency resonant gate driver for GaN HEMTs

GaN power transistors enable higher efficiency and higher system level power densities by operation at higher frequencies and temperatures than their Si counterparts. With a power device capable of working with much higher frequency, the influence of gate drivers on the efficiency becomes more significant. To avoid the limitations of gate driver power losses, novel gate driver solutions are necessary. In this paper, a resonant gate driver design is proposed and demonstrated up to 1 MHz in conjunction with a 600 V commercial GaN power transistor.