• DocumentCode
    2015937
  • Title

    Dipole antenna on a thick resin layer on the back side of a silicon chip at 60GHz

  • Author

    Hirokawa, Jiro ; Kimishima, Kenta ; Ando, Makoto ; Hirachi, Yasutake

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2009
  • fDate
    Sept. 29 2009-Oct. 1 2009
  • Firstpage
    528
  • Lastpage
    531
  • Abstract
    This paper proposes a dipole antenna integrated on a thick resin layer on the opposite side of a RF circuit layer though a hole in a silicon CMOS chip at 60 GHz. The thick resin layer can enhance the radiation efficiency. The connection loss between the antenna and the RF circuit is expected to be small. The simulated gain of a dipole on a resin layer of 200 μm thickness over a 5 mm square silicon chip is 5.4 dBi. The measured gain of 3.1dBi is achieved even though the reflection coefficient is -6 dB. The roughness of the sidewalls of the hole and posts by laser opening, the spread of thin copper with 2 mm thickness and the connection loss in the measurement could degrade the gain and give the discrepancy between the measurement and the simulation.
  • Keywords
    CMOS integrated circuits; dipole antennas; elemental semiconductors; millimetre wave integrated circuits; silicon; RF circuit layer; SI; back side; connection loss; dipole antenna; frequency 60 GHz; gain 3.1 dB; radiation efficiency; silicon CMOS chip; size 2 mm; size 200 mum; thick resin layer; Antenna measurements; Circuit simulation; Dipole antennas; Gain measurement; Loss measurement; Radio frequency; Resins; Semiconductor device measurement; Silicon; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. EuMC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4748-0
  • Type

    conf

  • Filename
    5296071