DocumentCode
2015937
Title
Dipole antenna on a thick resin layer on the back side of a silicon chip at 60GHz
Author
Hirokawa, Jiro ; Kimishima, Kenta ; Ando, Makoto ; Hirachi, Yasutake
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2009
fDate
Sept. 29 2009-Oct. 1 2009
Firstpage
528
Lastpage
531
Abstract
This paper proposes a dipole antenna integrated on a thick resin layer on the opposite side of a RF circuit layer though a hole in a silicon CMOS chip at 60 GHz. The thick resin layer can enhance the radiation efficiency. The connection loss between the antenna and the RF circuit is expected to be small. The simulated gain of a dipole on a resin layer of 200 μm thickness over a 5 mm square silicon chip is 5.4 dBi. The measured gain of 3.1dBi is achieved even though the reflection coefficient is -6 dB. The roughness of the sidewalls of the hole and posts by laser opening, the spread of thin copper with 2 mm thickness and the connection loss in the measurement could degrade the gain and give the discrepancy between the measurement and the simulation.
Keywords
CMOS integrated circuits; dipole antennas; elemental semiconductors; millimetre wave integrated circuits; silicon; RF circuit layer; SI; back side; connection loss; dipole antenna; frequency 60 GHz; gain 3.1 dB; radiation efficiency; silicon CMOS chip; size 2 mm; size 200 mum; thick resin layer; Antenna measurements; Circuit simulation; Dipole antennas; Gain measurement; Loss measurement; Radio frequency; Resins; Semiconductor device measurement; Silicon; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. EuMC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4748-0
Type
conf
Filename
5296071
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