DocumentCode :
2015991
Title :
Lifetime prediction of IGBT modules for traction applications
Author :
Ciappa, Mauro ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear :
2000
fDate :
2000
Firstpage :
210
Lastpage :
216
Abstract :
Bond wire lift-off caused by low-cycle fatigue is one among the dominant failure mechanisms of modern high power Insulated Gate Bipolar Transistors multichip modules used in traction applications. A model is proposed which is calibrated basing on data from accelerated tests and which predicts quantitatively the lifetime of devices submitted to cyclic loads as they are encountered in current converters of railway systems. It assumes linear accumulation of the thermal-cycle fatigue damage and takes into account the redundancy of the bond wires within a complex multichip module
Keywords :
failure analysis; insulated gate bipolar transistors; lead bonding; multichip modules; semiconductor device models; semiconductor device reliability; traction; bond wire lift-off; current converter; device lifetime model; failure mechanism; high power insulated gate bipolar transistor; multichip module; railway system; redundancy; thermal cycle fatigue; traction; Bonding; Failure analysis; Fatigue; Insulated gate bipolar transistors; Life estimation; Life testing; Multichip modules; Power system modeling; Predictive models; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
Type :
conf
DOI :
10.1109/RELPHY.2000.843917
Filename :
843917
Link To Document :
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