• DocumentCode
    2015991
  • Title

    Lifetime prediction of IGBT modules for traction applications

  • Author

    Ciappa, Mauro ; Fichtner, Wolfgang

  • Author_Institution
    Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    210
  • Lastpage
    216
  • Abstract
    Bond wire lift-off caused by low-cycle fatigue is one among the dominant failure mechanisms of modern high power Insulated Gate Bipolar Transistors multichip modules used in traction applications. A model is proposed which is calibrated basing on data from accelerated tests and which predicts quantitatively the lifetime of devices submitted to cyclic loads as they are encountered in current converters of railway systems. It assumes linear accumulation of the thermal-cycle fatigue damage and takes into account the redundancy of the bond wires within a complex multichip module
  • Keywords
    failure analysis; insulated gate bipolar transistors; lead bonding; multichip modules; semiconductor device models; semiconductor device reliability; traction; bond wire lift-off; current converter; device lifetime model; failure mechanism; high power insulated gate bipolar transistor; multichip module; railway system; redundancy; thermal cycle fatigue; traction; Bonding; Failure analysis; Fatigue; Insulated gate bipolar transistors; Life estimation; Life testing; Multichip modules; Power system modeling; Predictive models; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-5860-0
  • Type

    conf

  • DOI
    10.1109/RELPHY.2000.843917
  • Filename
    843917