Title :
A 300 GHz active frequency-doubler and integrated resistive mixer MMIC
Author :
Kallfass, I. ; Tessmann, A. ; Massler, H. ; Lopez-Diaz, D. ; Leuther, A. ; Schlechtweg, M. ; Ambacher, O.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg, Germany
Abstract :
An active frequency-doubler MMIC achieving an output frequency of 300 GHz and its monolithic integration with a 300 GHz resistive mixer is presented. The frequency-doubler provides a broadband source with an average output power of -9.5 dBm and better than 10 % conversion efficiency in the frequency range from 250 to 310 GHz. At 300 GHz, a non-saturated output power of -6.4 dBm is measured at an input power of 1 dBm. A 300 GHz down-conversion mixer MMIC, combining the frequency-doubler with a resistive mixer, achieves a conversion loss of 20 dB in the RF range from 246 to 300 GHz. Both MMICs are realized in a metamorphic HEMT technology with 50 nm gate-length.
Keywords :
III-V semiconductors; MMIC frequency convertors; MMIC mixers; aluminium compounds; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; GaAs; InAlAs-InGaAs; active frequency-doubler; broadband source; conversion efficiency; down-conversion mixer MMIC; frequency 250 GHz to 310 GHz; frequency-doubler MMIC; input power; integrated resistive mixer MMIC; metamorphic HEMT; monolithic integration; FETs; Frequency conversion; MMICs; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Mixers; Monolithic integrated circuits; Power generation; mHEMTs; 300 GHz; MMICs; mHEMT; millimeter-wave FET frequency conversion; millimeter-wave frequency multiplication;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7