DocumentCode
2016087
Title
Trends in silicon germanium BiCMOS integration and reliability
Author
Dunn, J. ; Harame, D. ; Onge, S. St ; Joseph, A. ; Feilchenfeld, N. ; Watson, K. ; Subbanna, S. ; Freeman, G. ; Voldman, S. ; Ahlgre, D. ; Johnson, R.
Author_Institution
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
fYear
2000
fDate
2000
Firstpage
237
Lastpage
242
Abstract
A base-after-gate integration scheme has been developed fora 0.25 μm SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using SiGe for applications with high collector-base voltage with high emitter current are also explored. Finally, the ESD characteristics of the SiGe BiCMOS technology elements are summarized
Keywords
BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; integrated circuit reliability; semiconductor materials; 0.25 micron; ESD; NPN device reliability; SiGe; base-after-gate integration; high frequency transistor; silicon-germanium BiCMOS IC; BiCMOS integrated circuits; CMOS technology; Electrostatic discharge; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit reliability; Metal-insulator structures; Protection; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843921
Filename
843921
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