Title :
Trends in silicon germanium BiCMOS integration and reliability
Author :
Dunn, J. ; Harame, D. ; Onge, S. St ; Joseph, A. ; Feilchenfeld, N. ; Watson, K. ; Subbanna, S. ; Freeman, G. ; Voldman, S. ; Ahlgre, D. ; Johnson, R.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
A base-after-gate integration scheme has been developed fora 0.25 μm SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using SiGe for applications with high collector-base voltage with high emitter current are also explored. Finally, the ESD characteristics of the SiGe BiCMOS technology elements are summarized
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; integrated circuit reliability; semiconductor materials; 0.25 micron; ESD; NPN device reliability; SiGe; base-after-gate integration; high frequency transistor; silicon-germanium BiCMOS IC; BiCMOS integrated circuits; CMOS technology; Electrostatic discharge; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit reliability; Metal-insulator structures; Protection; Silicon germanium;
Conference_Titel :
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5860-0
DOI :
10.1109/RELPHY.2000.843921
