Title :
InGaN laser diodes fabricated by MBE
Author :
Heffernan, J. ; Kauer, M. ; Johnson, K. ; Zellweger, C. ; Bousquet, V. ; Hooper, S.E.
Author_Institution :
Sharp Lab. Eur. Ltd., Oxford, UK
Abstract :
InGaN multiple quantum well laser diodes have been fabricated by MBE. Lasers grown on GaN template substrates and on free-standing GaN substrates exhibit a minimum threshold current density of 7 kAcm-2 at room temperature.
Keywords :
current density; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; wide band gap semiconductors; 20 degC; GaN; GaN template substrates; InGaN; InGaN multiple quantum well laser diodes; MBE; current density; free-standing GaN substrates; room temperature; Diode lasers; Etching; Gallium nitride; Light emitting diodes; MOCVD; Molecular beam epitaxial growth; Quantum well lasers; Substrates; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363220
