Title :
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
Author :
Chu, Jung-Tang ; Liang, Wcn-Dcng ; Chu, Chen-Fu ; Kuo, H.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This letter reports on the large-area light-emission GaN LEDs with the size of 1050×1050 μm2 fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.
Keywords :
bonding processes; gallium compounds; light emitting diodes; semiconductor growth; wide band gap semiconductors; Cu; GaN; LLO; conducting copper substrates; illumination; large-area light-emission GaN LED; metal bonding; uniform current spreading; uniform light-emission pattern; Bonding; Contacts; Copper; Etching; Gallium nitride; Light emitting diodes; Light sources; Lighting; Substrates; Thermal conductivity;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363221
