Title :
Post-growth enhancement of p-GaN conductivity
Author :
Karouta, F. ; Kappers, M.J. ; Krämer, M. C J C M ; Jacobs, B.
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Abstract :
The paper reports on the investigation an improvement of the p-type conductivity of Mg-doped GaN by creating Ga-vacancies in the lattice.
Keywords :
III-V semiconductors; gallium compounds; impurity-vacancy interactions; magnesium; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; Ga-vacancies; GaN:Mg; p-GaN conductivity; post-growth enhancement; Bonding; Conductivity; Epitaxial growth; Etching; Gallium nitride; Hydrogen; Lattices; Materials science and technology; Nitrogen; Rapid thermal annealing;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363222
