DocumentCode
2016227
Title
Class-A power amplifier design technique based on electron device low-frequency characterization
Author
Raffo, Antonio ; Di Falco, Sergio ; Vadalà, Valeria ; Scappaviva, Francesco ; Vannini, Giorgio
Author_Institution
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
fYear
2009
fDate
28-29 Sept. 2009
Firstpage
463
Lastpage
466
Abstract
In this paper, a new approach to class-A power amplifier design is proposed. Such a technique, which is mostly based on low-frequency characterisation, allows to reach the same design goals obtained through expensive nonlinear setups operating at microwave frequencies. In order to demonstrate the effectiveness of the proposed design technique, a practical example of class-A power amplifier design, based on GaN technology, is deeply investigated.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; GaN; GaN technology; class-A power amplifier design; electron device low-frequency characterization; general design methodology; low-frequency dispersion; microwave frequencies; Design methodology; Dispersion; Electron devices; FETs; Gallium nitride; Integrated circuit modeling; Power amplifiers; Power system reliability; Predictive models; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4749-7
Type
conf
Filename
5296082
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