DocumentCode :
2016268
Title :
New plasma source for plasma immersion ion implantation
Author :
Li, L.H. ; Poon, R.W.Y. ; Kwok, S.C.H. ; Chu, Paul K.
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
fYear :
2003
fDate :
5-5 June 2003
Firstpage :
279
Abstract :
Summary form only given, as follows. Plasma immersion ion implantation (PIII) is a useful niche technology for the modification of surface properties of materials and industrial components that are large or have an irregular shape. The samples are immersed in an overlying plasma from which ions are extracted and implanted into the samples. A plasma source is typically needed to supply the ions a novel method to create ions from solid materials possessing low melting point and high vapor pressure using an evaporation-glow discharge hybrid technique. The elements investigated are sulfur, phosphorus, and sodium that are very important in biomaterials. Using this method, sulfur is vaporized first, and then the vapor is introduced into a small glass-shielded chamber to lessen contamination of the big vacuum chamber. Sulfur is then ionized and passed into the PIII chamber to carry out plasma implantation and deposition.
Keywords :
glow discharges; plasma immersion ion implantation; plasma sources; XPS depth profiling; big vacuum chamber; biomaterials; evaporation-glow discharge hybrid technique; glass-shielded chamber; implantation results; plasma immersion ion implantation; Biological materials; Contamination; Fault location; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Shape; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
ISSN :
0730-9244
Print_ISBN :
0-7803-7911-X
Type :
conf
DOI :
10.1109/PLASMA.2003.1228825
Filename :
1228825
Link To Document :
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