A 220GHz subharmonic receiver front end in a SiGe HBT technology

Author

Öjefors, Erik ; Heinemann, Bernd ; Pfeiffer, Ullrich R.

Author_Institution

Univ. of Wuppertal, Wuppertal, Germany

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A monolithic 220-GHz receiver front-end manufactured in an engineering version of an f _T / f_max = 280/435-GHz SiGe technology is presented. The front-end consists of a three-stage differential LNA and a subharmonic mixer. A breakout of the 220-GHz LNA provides 15 dB gain and a bandwidth of 28 GHz. The integrated downconverter yields a conversion gain of 16 dB, a 15-dB DSB NF, and a 30-GHz bandwidth when pumped with a 0-dBm, 110-GHz LO signal.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; HBT technology; SiGe; bandwidth 28 GHz; bandwidth 30 GHz; frequency 110 GHz; frequency 220 GHz; gain 15 dB; gain 16 dB; integrated down converter; monolithic receiver front-end; subharmonic mixer; subharmonic receiver front end; three-stage differential LNA; Gain; Heterojunction bipolar transistors; Impedance matching; Mixers; Radio frequency; Receivers; Silicon germanium; MMIC frequency converters; Millimeter wave receivers; heterojunction bipolar transistors; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940604

Filename

5940604