Title :
A 220GHz subharmonic receiver front end in a SiGe HBT technology
Author :
Öjefors, Erik ; Heinemann, Bernd ; Pfeiffer, Ullrich R.
Author_Institution :
Univ. of Wuppertal, Wuppertal, Germany
Abstract :
A monolithic 220-GHz receiver front-end manufactured in an engineering version of an f T / fmax = 280/435-GHz SiGe technology is presented. The front-end consists of a three-stage differential LNA and a subharmonic mixer. A breakout of the 220-GHz LNA provides 15 dB gain and a bandwidth of 28 GHz. The integrated downconverter yields a conversion gain of 16 dB, a 15-dB DSB NF, and a 30-GHz bandwidth when pumped with a 0-dBm, 110-GHz LO signal.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; HBT technology; SiGe; bandwidth 28 GHz; bandwidth 30 GHz; frequency 110 GHz; frequency 220 GHz; gain 15 dB; gain 16 dB; integrated down converter; monolithic receiver front-end; subharmonic mixer; subharmonic receiver front end; three-stage differential LNA; Gain; Heterojunction bipolar transistors; Impedance matching; Mixers; Radio frequency; Receivers; Silicon germanium; MMIC frequency converters; Millimeter wave receivers; heterojunction bipolar transistors; silicon;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940604
