Title :
Influence of Gate Insulator Engineering on the electronic transport of AlGaN/GaN MISHFETs: A simulation study for performance optimization and non linear device modeling
Author :
Aggarwal, Ruchika ; Agrawal, Anju ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this paper the influence of Gate Insulator Engineering (GIE) on the electronic transport of AlGaN/GaN MISHFET (Metal Insulator Semiconductor Heterostructure Field Effect Transistor) is investigated using ATLAS-3D device simulator and presented as an optimization tool for microwave applications. Important transport characteristics viz. channel potential and electric field are evaluated and interpreted for all the structures. Results reveal improved carrier transport properties for GIE structures in comparison to conventional MISHFET structures.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; transport processes; ATLAS-3D device simulator; AlGaN-GaN; MISHFET; carrier transport; channel potential; electric field; electronic transport; gate insulator engineering; metal insulator semiconductor heterostructure field effect transistor; microwave device; nonlinear device modeling; performance optimization; transport characteristics; Aluminum gallium nitride; Dielectrics and electrical insulation; Electrons; Frequency; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Microwave devices; Optimization;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
