Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Author

Voldman, S. ; Juliano, P. ; Johnson, R. ; Schmidt, N. ; Joseph, A. ; Furkay, S. ; Rosenbaum, E. ; Dunn, J. ; Harame, D. ; Meyerson, B.

Author_Institution

Microelectron. Div., IBM Corp., Essex Junction, VT, USA

fYear

2000

fDate

2000

Firstpage

310

Lastpage

316

Abstract

This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT). Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing, failure analysis and simulation of SiGe HBT devices is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology

Keywords

Ge-Si alloys; electrostatic discharge; failure analysis; heterojunction bipolar transistors; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; semiconductor materials; BiCMOS SiGe technology; SiGe; electrostatic discharge; electrothermal simulation; epitaxial-base silicon-germanium heterojunction bipolar transistor; failure analysis; high current pulse; human body model; pseudomorphic HBT; transmission line pulse; wafer level reliability testing; Biological system modeling; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Humans; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Testing; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-5860-0

Type

conf

DOI

10.1109/RELPHY.2000.843932

Filename

843932