Title :
All gold metallization system enables high power RF pulsed transistors with high reliability
Author :
Battaglia, Brian ; Rice, Dave ; Gogoi, Bishnu
Author_Institution :
HVVi Semicond., Phoenix, AZ, USA
Abstract :
A new silicon transistor has been developed that enables the design of high power pulsed amplifiers through its unique device structure and reliable packaging methodology. The HVVFETtrade (High Voltage Vertical Field Effect Transistor) technology has been optimized for pulsed applications with an all gold wire scheme. The HVVFET has been characterized with over 10 billion pulses with no sign of wire fatigue or breakage. Wire profile measurements indicate that the difference between the control and RF stress test parts are within manufacturing tolerances. The threshold voltage showed less than a 3 mV deviation from the control units to the stressed units. The RF parameters were characterized before and after the RF pulse stress testing and show less than 1% deviation in performance indicating a highly reliable device ideally suited for high power RF pulsed applications.
Keywords :
elemental semiconductors; flip-chip devices; gold; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device metallisation; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; silicon; HVVFET; RF pulse stress testing; Si; all gold metallization system; flip-chip package; high power RF pulsed transistors; high power pulsed amplifiers; high voltage vertical field effect transistor; packaging; reliability; threshold voltage; wire profile measurements; Gold; High power amplifiers; Metallization; Power system reliability; Pulse amplifiers; Radio frequency; Silicon; Stress control; Testing; Wire;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
