DocumentCode :
2016562
Title :
Thermal characteristics simulation of semiconductor lasers packaging for high speed application
Author :
Jinwei Gao ; Ximeng Han ; Yonglin Yu
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2015
fDate :
11-14 Aug. 2015
Firstpage :
8
Lastpage :
11
Abstract :
Thermal relaxation time can be critical in high speed optoelectronic devices. In this paper, a three-dimensional thermal model of a semiconductor laser package is developed by the finite element method. A proper designed proportion-integration-differentiation loop is designed for temperature managing. Factors affecting thermal relaxation time in the device are analyzed. Thermal time constant of thermistor and submount are obtained from the simulation. Results show that different materials used for submount can influence the thermal constant time from several hundred microseconds (carbon nanotube) to several hundred milliseconds (AIN, invar). A method of reducing the height of thermistor to increase the temperature detecting speed is proposed, which is necessary when the response speed of the submount is fast. These results could be useful for optoelectronic devices packaging for high speed applications.
Keywords :
finite element analysis; high-speed optical techniques; packaging; semiconductor lasers; thermal management (packaging); thermistors; three-term control; finite element method; high speed applications; proportion-integration-differentiation loop; semiconductor lasers packaging; submount; temperature detecting speed; temperature managing; thermal characteristics simulation; thermal relaxation time; thermal time constant; thermistor; three-dimensional thermal model; Heating; Silicon; Silicon carbide; Software; Substrates; Thermistors; semiconductor laser; submount; thermal management; thermoelectric cooler (TEC);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location :
Changsha
Type :
conf
DOI :
10.1109/ICEPT.2015.7236532
Filename :
7236532
Link To Document :
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