Author :
Xie, Haolu ; Rakers, Patrick ; Fernandez, Rick ; McCain, Terrie ; Xiang, Joan ; Parkes, John ; Riches, Jim ; Verellen, Richard ; Rahman, Mahib ; Shimoni, Elie ; Bhan, Vivek ; Schwartz, Daniel B.
Author_Institution :
Fujitsu Semicond. Wireless Products Inc., Tempe, AZ, USA
Abstract :
A single-chip multi-mode multi-band saw-less 90nm CMOS receiver is designed and implemented for 4G mobile platform. It supports LTE/WCDMA/EGPRS standards and supports 4 GSM bands (GSM850, EGSM900, DCS1800, PCS1900), WCDMA (Bands I, II, III, IV, V, VI, VIII, IX, X and XI) and LTE (FDD Bands 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 17 and TDD bands 38 or 40). The receiver achieves a typical 3dB and maximum 4dB noise figure (NF) in all standards and bands. By using inductive source degeneration LNA architecture with 24dB passive matching voltage gain, the receiver radio frequency (RF)/analog front-end meets noise and linearity requirements for all modes and all bands with small power consumption. For example, the whole main receiver RF and analog blocks in band1 LTE 20MHz mode operate at 1.8V supply and draw total only 24mA current at maximum TX output power condition. It also automatically calibrates baseband low-pass filter cut-off frequency, mixer image rejection and IIP2 performance.
Keywords :
4G mobile communication; CMOS analogue integrated circuits; Long Term Evolution; code division multiple access; diversity reception; low noise amplifiers; packet radio networks; current 24 mA; frequency 20 MHz; noise figure 3 dB; noise figure 4 dB; voltage 1.8 V; Bandwidth; CMOS integrated circuits; Calibration; Mixers; Multiaccess communication; Receivers; Spread spectrum communication; Diversity; EGPRS; LTE; Receiver; WCDMA;