DocumentCode
2016615
Title
Quantitative projections of reliability and performance for low-k/Cu interconnect systems
Author
Banerjee, Kaustav ; Mehrotra, Amit ; Hunter, William ; Saraswat, Krishna C. ; Goodson, Kenneth E. ; Wong, S. Simon
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
2000
fDate
2000
Firstpage
354
Lastpage
358
Abstract
This paper presents a methodology for quantitative analysis of the role of electromigration (EM) reliability and interconnect performance in determining the optimal interconnect design in low-k/Cu interconnect systems. It is demonstrated that EM design limits for signal lines are satisfied once interconnect performance is optimized
Keywords
copper; electromigration; integrated circuit interconnections; integrated circuit reliability; Cu; electromigration reliability; interconnect design; interconnect performance; low-k/Cu interconnect systems; quantitative analysis; Copper; Current density; Delay; Design optimization; Dielectric materials; Electromigration; Equations; Geometry; Signal design; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5860-0
Type
conf
DOI
10.1109/RELPHY.2000.843939
Filename
843939
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